2.3 Test requirements

2.3.1 The working states of the components
The measured working states in radiating field and monitored during radiating process by radiation resistant cable see figure 3


Figure 3 The Test Scene
Notes: the phototransistor has two working states which are linear and saturate states. The two working states are available by regulating the stop of emitter or phototransistor or by magnifying the luminosity of the emitter.

If the phototransistor works in deeply saturate sector, the variety of its parameters can only be measured qualitatively, only in linear sector can it be measured quantitatively.

2.3.2 The requirements to the emitter and the phototransistor assemblies
The emitter and phototransistor assemblies are on the test-platform, the distances from the central axis of the emitter (Y direction) to the platform and from the central axis of the phototransistor (Y direction) to the platform are equal ( in Z direction, expressed as "h"). The contact planes of the assemblies with the platform have the required planeness which makes the maximum of signal output invariant makes the maximum of signal output invariant while the emitter and phototransistor assemblies are moved each other on the platform in x direction. The distance (d) should be kept constant when assembly is moved.

Reference phototransistor is used while the emitters are measured.

Conversely, reference emitter is used while the phototransistor are measured.

The reference component assemblies are mounted on the platform.

2.4 Measuring method
Being reference of each other, the emitter and phototransistor are made to coupling pair, forming the relation of cause and effect, then the maximum of signal output can be compared before and after radiation (an example for phototransistor is given below)

Before radiation, the reference emitter is made to be in required working state, the maximum of signal output Vimas can be read out by moving the measured assembly in X direction.

After radiation, take out the phototransistor assembly from the radiating field and align it with the reference assembly, then the maximum. of signal output V2mas can be read out by reset measurement.

The emitter can be measured using the method mentioned above.

2.5 The results of measurement
The results of measurement can be calculated according to the formula below:

For the emitter, the variety of its parameter is

K1

V2mas - V1max ---------------- V1max

x 100 %

K1 is the factor between the optical and electrical parameters.
For the phototransistor, the variety of its parameter is

The curve diagrams show that the anti-radiation capabilities of the emitters and phototransistors are decreased in turn arranging in the order number (1)(2)(3).