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November 2000
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More Capable Telecom and Remote Sensing Satellites
A new family of high-frequency, indium phosphide (InP) integrated circuits developed by TRW and NASA's Jet Propulsion Laboratory (JPL), Pasadena, Calif., promises to increase data rates, shrink the size and increase the overall performance capabilities of next-generation satellite communications and remote sensing payloads. The low-noise amplifier (LNA) millimeter wave monolithic integrated circuits (MMICs) were fabricated using TRW's 0.07-micron gate high electron mobility transistor (HEMT) process. They offer state-of-the-art gain and noise figures at operating frequencies ranging from 100 billion cycles per second (100 GHz) to 215 GHz. The 215 GHz InP LNA is the highest frequency integrated circuit ever reported. The chips' frequencies are significant because the International Telecommunications Union, which coordinates international spectrum allocation, in April opened spectrum in the 70-180 GHz frequency bands to future radio, satellite communications, radar and radio astronomy applications. For more details, please visit
www.businesswire.com/trw
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